Recently, the 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) was successfully held in Bremen, Germany. Professor Sheng Kuang, Vice President (Executive Vice President) of Huzhou university, was inducted into the ISPSD Hall of Fame for his academic achievements in silicon carbide power devices and contributions to ISPSD conference organization. Sheng becomes the second scholar from mainland China to receive this honor, following Academician Chen Xingbi.

　　ISPSD, a flagship conference under IEEE, encompasses design, technology, packaging, and application of power semiconductor devices and power integrated circuits. Often referred to as the Olympic Conference in its domain, ISPSD is considered the most influential and largest academic conference in the field of power devices. For over three decades, it has been a premier platform for presenting significant achievements by the global industrial and academic communities. The ISPSD Hall of Fame was established in 2018 to recognize outstanding contributors in the power semiconductor field, with only 2 to 3 scholars nominated each year, apart from the inaugural ceremony.

　　Professor Sheng Kuang was appointed as a Distinguished Professor of Changjiang Scholars Program in 2009 and was patronized by The National Science Fund for Distinguished Young Scholars in 2012. He was also selected as a Leading Scientific and Technological Innovation Talent under the Ten Thousand Talents Program in 2013. His research encompasses the design, manufacturing, and application of power semiconductor devices. He once served as the Chair of the 31st ISPSD in 2019, marking the first time the conference was held in mainland China since its inception. He is also a member of the ISPSD Advisory Committee and an editorial board member for journals such as IEEE Transactions on Electron Devices. Professor Sheng has significantly enhanced China's reputation and influence in the international power semiconductor field. Domestically, he serves as an expert in the Ministry of Science and Technology's key R&D programs for new displays and strategic electronic materials, and as a member of academic committees for several national key laboratories. His accolades include the second prize of the National Technological Invention Award and the Contribution Award of Overseas Chinese.

　　Professor Sheng’s recognition at this prestigious international conference not only amplifies the influence of China's power semiconductor field on the global stage but also encourages future researchers to further their contributions to the development of this domain, ensuring that voices from China continue to be heard worldwide.